htx4 - - 600 htx4-600 600v 4a triac v drm = 600 v i t(rms) = 4.0 a 1.t1 2. t2 3. gate ? repetitive peak off- state voltage: 600v ? r.m.s on ?state current (i t(rms) = 4a) ? high commutation dv/dt features htc4-600 2 1 3 to-126 2 1 3 to-126ml HTM4-600 general description the triac htx4-600 is suitable fo r ac switching application, phase control application such as heater cont rol, motor control, lighting control, and static switching relay. symbol parameter value units absolute maximum ratings (t a =25 ) symbol parameter value units v drm repetitive peak off- state voltage 600 v i t(rms) r.m.s on-state current (ta = 66 ) 4a i tsm surge on-state current (one cycle, 50/60hz, peak, non repetitive) 50hz 30 a 60hz 33 a v gm peak gate voltage 7 v i peak gate current 05 a i gm peak gate current 0 . 5 a p gm peak gate power dissipation 1.5 w t stg storage temperature range -40 to +125 t j operating temperature -40 to +125 semihow rev.a0,dec 2010
htx4 - electrical characteristics (t =25 ) - 600 symbol parameter test conditions min typ max units i gt gate trigger current v d =6v, r l =10 ? 1+, 1-, 3- 20 ma v gt gate trigger voltage v d =6v, r l =10 ? 1+, 1-, 3- 1.5 v v gd non trigger gate voltage t j =125 , v d =1/2v drm 0.2 v (dv/dt)c critical rate of rise of off-state voltage at communication t j =125 , v d =2/3v drm (di/dt)c=-3a/ms 5.0 v/us i holding current 50 ma electrical characteristics (t a =25 1.0 ma v tm peak on-state voltage it=6a, inst, measurement 1.6 v thermal characteristics symbol parameter test conditions case min typ max units r jc thermal resistance junction to case to-126/ml 3.5 /w semihow rev.a0,dec 2010
htx4 - typical characteristics - 600 1 10 a te current [a] e voltage [v] fig 1. gate characteristics fig 2. on-state voltage 10 1 10 2 10 3 0.1 1 on-st a on-state voltage [v] gat e gate current [ma] fig 3. gate trigger voltage vs. junction temperature fig 4. on-state current vs. maximum power dissipation dissipation [w] power rms on-state current [a] junction temperature [ ] fig 5. on-state current vs. allowable case temperature fig 6. surge on-state current rating (non-repetitive) -state current [a] e case temp [ ] 10 0 10 1 10 2 surge on time [cycles] allowabl e rms on-state current [a] semihow rev.a0,dec 2010
htx4 - typical characteristics - 600 s ient thermal d ance [ /w] fig 7. gate trigger current vs. junction temperature fig 8. transient thermal impedance tran s impe d time [sec] junction temperature [ ] fig 9. gate trigger characteristics test circuit semihow rev.a0,dec 2010
semihow rev.1.0 jan 2006 htx4-600 dimensions in millimeters dim millimeters a8 . 5 m a x b 12.0max c 13.0min d 3.80.2 g 0.780.08 g1 1.2 h2 . 8 m a x h3 1.27 k 2.50.2 l2 . 3 m a x 3.200.2 package dimension htc4-600 (to-126)
semihow rev.1.0 jan 2006 htx4-600 corresponding symbol measurement a(mm) 7.99 0.25 b(mm) 11.12 0.25 c(mm) 14.5 0.5 e(mm) 3.625 0.125 f(mm) 1.4 0.12 g(mm) 0.76 0.08 g1(mm) 1.3 0.12 h(mm) 3.57 0.13 h3(mm) 2.01 0.13 i(mm) 2.99 0.38 k(mm) 1.0 0.12 l(mm) 2.3max 1(mm) 3.0 0.12 package dimension HTM4-600 (to-126ml)
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